W947D2HBJX6E TR Winbond Electronics

Visuals are for illustrative purposes only. For precise technical details, please refer to the product data sheet.

W947D2HBJX6E TR

IC DRAM 128MBIT LVCMOS 90VFBGA

Manufacturer:Winbond ElectronicsMfr. Part #:W947D2HBJX6E TRPackaging Standard:2,500Part Status:Obsolete
Product Overview

SDRAM - Mobile LPDDR Memory IC 128Mbit LVCMOS 166 MHz 5 ns 90-VFBGA (8x13)

Document:PDFDatasheet
Cost-Optimized Global Sourcing
Flexible MOQ Options Available
Reliable Supply Channels for Shortage Situations

Product Attributes

TypeDescription
Memory TechnologySDRAM - Mobile LPDDR
Memory Capacity128Mbit
Memory Architecture4M x 32
Interface TypeLVCMOS
Operating Frequency166 MHz
Write Cycle Time15ns
Access Time5 ns
Supply Voltage1.7V ~ 1.95V
Operating Temperature Range-25°C ~ 85°C (TC)
Package / Case90-TFBGA
Availability

Limited supply

Obsolete – limited market supply

Part Status:
Obsolete
Lead Time
MOQ
To be confirmed upon sourcing
Project-based / Inquiry

Sourcing an obsolete memory component?

Submit an RFQ to get sourcing options.

Alternative parts or cross references are evaluated upon request only.

Need more help?Chat with us now.
Dedicated memory specialists
Real human, fast-response support

Have Questions?

Contact our team to learn more about our quality assurance processes and how we can support your procurement needs.